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Napson Corporation 4-point probe instrument resistage rg-120/rt-80
4 Point Probe Instrument Resistage Rg 120/Rt 80, supplied by Napson Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/rt-80/resistage+rg+120+rt+80/us12351737-664-15-18
Average 90 stars, based on 1 article reviews
4-point probe instrument resistage rg-120/rt-80 - by Bioz Stars, 2026-11
90/100 stars

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Related Articles

Concentration Assay:

Article Title: Polycrystalline silicon material
Article Snippet: In a long axis direction of the obtained single crystal, a specific resistance value was measured every 10 mm with a four-point probe resistance measuring device (RT-80 manufactured by NAPSON), and the average resistivity was calculated.

Article Title: Wafer-scale nanocracks enable single-molecule detection and on-site analysis.
Article Snippet: Large-area surface-enhanced Raman spectroscopy (SERS) sensing platforms displaying ultrahigh sensitivity and signal uniformity have potentially enormous sensing applicability, but they are still challenging to prepare in a scalable manner.. In this study, silver nanopaste (AgNPA) was employed to prepare a wafer-scale, ultrasensitive SERS substrate.. The self-generated, high-density Ag nanocracks (NCKs) with small gaps could be created on Si wafers via a spin-coating process, and provided extremely abundant hotspots for SERS analyses with ultrahigh sensitivity—down to the level of single molecules (enhancement factor: ca.

Article Title: Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination
Article Snippet: Resistivity and the thickness were measured using a 4-point probe (RT-80; Napson Co.) and an α–step profiler (DELTAK).

Article Title: Method for producing substrate with metal body
Article Snippet: [Reflectance (%)] The reflectance was measured in the 700 nm wavelength region with a spectrophotometer (U-4100, from Hitachi High-Technologies Corporation).

Article Title: Facile Synthesis of Diamino-Modified Graphene/Polyaniline Semi-Interpenetrating Networks with Practical High Thermoelectric Performance.
Article Snippet: p-Phenediamino-modified graphene (PDG) has been newly synthesized via a facile green one-step chemical route as a functionalized graphene-based additive to copolymerize with aniline for fabricating innovative PDG/polyaniline conducting polymer composites (PDG/PANI) containing very special semi-interpenetrating networks (S-IPNs).. The S-IPNs which not only provide additional pathways by creating chemically-bonded PDG and PANI for smoothly transporting carriers, but greatly reduce the amount of graphene required to less than a few percent could effectively improve the overall electrical conductivity, Seebeck coefficient and thus the thermoelectric performance.. The found optimized thermoelectric figure of merit (ZT) of 0.74 approaches a practical high level which is comparable or much higher than previously reported ones for thermoelectric polymers.

Article Title: Polishing liquid and polishing method
Article Snippet: The film to be polished was polished for 60 sec while adding the polishing liquid dropwise onto the platen at 10 mL/min and setting the number of revolutions of the platen to 80 min−1 (rpm). (Calculation Method of Tungsten Polishing Rate) The film thicknesses of the tungsten films before and after polishing were measured using a sheet resistance meter (manufactured by NAPSON CORPORATION, RT-80/RG-80), and the polishing rate was calculated from the film thickness difference.

Article Title: Reactions between Si melt and various ceramics
Article Snippet: The concentration evaluation of the residual oxygen in Si by Fourier-transform infrared spectroscopy (FTIR, Bruker VERTEX 70) has been performed based on ASTM F 1188 method [13] and the resistivity of Si was measured by four-point probe resistance meter (RT-80, Napson Corporation, Tokyo, Japan).

Article Title: Preparing Silver–Copper pastes in accordance with percolation theory for die attach bonding
Article Snippet: The Si die and Cu substrate were successfully bonded with self-developed Ag–Cu pastes through two processes: tube furnace annealing at 250 C for 30 min in an Ar atmosphere and hot pressing at 250 C and 5 MPa for 30 min in air.. The microstructures, mechanical properties, thermal conductivity, and resistivity of the bonded samples were analyzed and then compared with those of commercial Ag paste.. For the samples subjected to tube furnace annealing, the critical Ag volume of the Ag–Cu paste was 35%, shear strength was 5.17 MPa, and resistivity was 9.22 μΩ-cm according to percolation theory.

Fourier Transform Infrared Spectroscopy:

Article Title: Polycrystalline silicon material
Article Snippet: In a long axis direction of the obtained single crystal, a specific resistance value was measured every 10 mm with a four-point probe resistance measuring device (RT-80 manufactured by NAPSON), and the average resistivity was calculated.

Article Title: Wafer-scale nanocracks enable single-molecule detection and on-site analysis.
Article Snippet: Large-area surface-enhanced Raman spectroscopy (SERS) sensing platforms displaying ultrahigh sensitivity and signal uniformity have potentially enormous sensing applicability, but they are still challenging to prepare in a scalable manner.. In this study, silver nanopaste (AgNPA) was employed to prepare a wafer-scale, ultrasensitive SERS substrate.. The self-generated, high-density Ag nanocracks (NCKs) with small gaps could be created on Si wafers via a spin-coating process, and provided extremely abundant hotspots for SERS analyses with ultrahigh sensitivity—down to the level of single molecules (enhancement factor: ca.

Article Title: Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination
Article Snippet: Resistivity and the thickness were measured using a 4-point probe (RT-80; Napson Co.) and an α–step profiler (DELTAK).

Article Title: Method for producing substrate with metal body
Article Snippet: [Reflectance (%)] The reflectance was measured in the 700 nm wavelength region with a spectrophotometer (U-4100, from Hitachi High-Technologies Corporation).

Article Title: Facile Synthesis of Diamino-Modified Graphene/Polyaniline Semi-Interpenetrating Networks with Practical High Thermoelectric Performance.
Article Snippet: p-Phenediamino-modified graphene (PDG) has been newly synthesized via a facile green one-step chemical route as a functionalized graphene-based additive to copolymerize with aniline for fabricating innovative PDG/polyaniline conducting polymer composites (PDG/PANI) containing very special semi-interpenetrating networks (S-IPNs).. The S-IPNs which not only provide additional pathways by creating chemically-bonded PDG and PANI for smoothly transporting carriers, but greatly reduce the amount of graphene required to less than a few percent could effectively improve the overall electrical conductivity, Seebeck coefficient and thus the thermoelectric performance.. The found optimized thermoelectric figure of merit (ZT) of 0.74 approaches a practical high level which is comparable or much higher than previously reported ones for thermoelectric polymers.

Article Title: Polishing liquid and polishing method
Article Snippet: The film to be polished was polished for 60 sec while adding the polishing liquid dropwise onto the platen at 10 mL/min and setting the number of revolutions of the platen to 80 min−1 (rpm). (Calculation Method of Tungsten Polishing Rate) The film thicknesses of the tungsten films before and after polishing were measured using a sheet resistance meter (manufactured by NAPSON CORPORATION, RT-80/RG-80), and the polishing rate was calculated from the film thickness difference.

Article Title: Reactions between Si melt and various ceramics
Article Snippet: The concentration evaluation of the residual oxygen in Si by Fourier-transform infrared spectroscopy (FTIR, Bruker VERTEX 70) has been performed based on ASTM F 1188 method [13] and the resistivity of Si was measured by four-point probe resistance meter (RT-80, Napson Corporation, Tokyo, Japan).

Article Title: Preparing Silver–Copper pastes in accordance with percolation theory for die attach bonding
Article Snippet: The Si die and Cu substrate were successfully bonded with self-developed Ag–Cu pastes through two processes: tube furnace annealing at 250 C for 30 min in an Ar atmosphere and hot pressing at 250 C and 5 MPa for 30 min in air.. The microstructures, mechanical properties, thermal conductivity, and resistivity of the bonded samples were analyzed and then compared with those of commercial Ag paste.. For the samples subjected to tube furnace annealing, the critical Ag volume of the Ag–Cu paste was 35%, shear strength was 5.17 MPa, and resistivity was 9.22 μΩ-cm according to percolation theory.

Electron Microscopy:

Article Title: Polycrystalline silicon material
Article Snippet: In a long axis direction of the obtained single crystal, a specific resistance value was measured every 10 mm with a four-point probe resistance measuring device (RT-80 manufactured by NAPSON), and the average resistivity was calculated.

Article Title: Wafer-scale nanocracks enable single-molecule detection and on-site analysis.
Article Snippet: Large-area surface-enhanced Raman spectroscopy (SERS) sensing platforms displaying ultrahigh sensitivity and signal uniformity have potentially enormous sensing applicability, but they are still challenging to prepare in a scalable manner.. In this study, silver nanopaste (AgNPA) was employed to prepare a wafer-scale, ultrasensitive SERS substrate.. The self-generated, high-density Ag nanocracks (NCKs) with small gaps could be created on Si wafers via a spin-coating process, and provided extremely abundant hotspots for SERS analyses with ultrahigh sensitivity—down to the level of single molecules (enhancement factor: ca.

Article Title: Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination
Article Snippet: Resistivity and the thickness were measured using a 4-point probe (RT-80; Napson Co.) and an α–step profiler (DELTAK).

Article Title: Method for producing substrate with metal body
Article Snippet: [Reflectance (%)] The reflectance was measured in the 700 nm wavelength region with a spectrophotometer (U-4100, from Hitachi High-Technologies Corporation).

Article Title: Facile Synthesis of Diamino-Modified Graphene/Polyaniline Semi-Interpenetrating Networks with Practical High Thermoelectric Performance.
Article Snippet: p-Phenediamino-modified graphene (PDG) has been newly synthesized via a facile green one-step chemical route as a functionalized graphene-based additive to copolymerize with aniline for fabricating innovative PDG/polyaniline conducting polymer composites (PDG/PANI) containing very special semi-interpenetrating networks (S-IPNs).. The S-IPNs which not only provide additional pathways by creating chemically-bonded PDG and PANI for smoothly transporting carriers, but greatly reduce the amount of graphene required to less than a few percent could effectively improve the overall electrical conductivity, Seebeck coefficient and thus the thermoelectric performance.. The found optimized thermoelectric figure of merit (ZT) of 0.74 approaches a practical high level which is comparable or much higher than previously reported ones for thermoelectric polymers.

Article Title: Polishing liquid and polishing method
Article Snippet: The film to be polished was polished for 60 sec while adding the polishing liquid dropwise onto the platen at 10 mL/min and setting the number of revolutions of the platen to 80 min−1 (rpm). (Calculation Method of Tungsten Polishing Rate) The film thicknesses of the tungsten films before and after polishing were measured using a sheet resistance meter (manufactured by NAPSON CORPORATION, RT-80/RG-80), and the polishing rate was calculated from the film thickness difference.

Article Title: Reactions between Si melt and various ceramics
Article Snippet: The concentration evaluation of the residual oxygen in Si by Fourier-transform infrared spectroscopy (FTIR, Bruker VERTEX 70) has been performed based on ASTM F 1188 method [13] and the resistivity of Si was measured by four-point probe resistance meter (RT-80, Napson Corporation, Tokyo, Japan).

Article Title: Preparing Silver–Copper pastes in accordance with percolation theory for die attach bonding
Article Snippet: The Si die and Cu substrate were successfully bonded with self-developed Ag–Cu pastes through two processes: tube furnace annealing at 250 C for 30 min in an Ar atmosphere and hot pressing at 250 C and 5 MPa for 30 min in air.. The microstructures, mechanical properties, thermal conductivity, and resistivity of the bonded samples were analyzed and then compared with those of commercial Ag paste.. For the samples subjected to tube furnace annealing, the critical Ag volume of the Ag–Cu paste was 35%, shear strength was 5.17 MPa, and resistivity was 9.22 μΩ-cm according to percolation theory.

Microscopy:

Article Title: Polycrystalline silicon material
Article Snippet: In a long axis direction of the obtained single crystal, a specific resistance value was measured every 10 mm with a four-point probe resistance measuring device (RT-80 manufactured by NAPSON), and the average resistivity was calculated.

Article Title: Wafer-scale nanocracks enable single-molecule detection and on-site analysis.
Article Snippet: Large-area surface-enhanced Raman spectroscopy (SERS) sensing platforms displaying ultrahigh sensitivity and signal uniformity have potentially enormous sensing applicability, but they are still challenging to prepare in a scalable manner.. In this study, silver nanopaste (AgNPA) was employed to prepare a wafer-scale, ultrasensitive SERS substrate.. The self-generated, high-density Ag nanocracks (NCKs) with small gaps could be created on Si wafers via a spin-coating process, and provided extremely abundant hotspots for SERS analyses with ultrahigh sensitivity—down to the level of single molecules (enhancement factor: ca.

Article Title: Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination
Article Snippet: Resistivity and the thickness were measured using a 4-point probe (RT-80; Napson Co.) and an α–step profiler (DELTAK).

Article Title: Method for producing substrate with metal body
Article Snippet: [Reflectance (%)] The reflectance was measured in the 700 nm wavelength region with a spectrophotometer (U-4100, from Hitachi High-Technologies Corporation).

Article Title: Facile Synthesis of Diamino-Modified Graphene/Polyaniline Semi-Interpenetrating Networks with Practical High Thermoelectric Performance.
Article Snippet: p-Phenediamino-modified graphene (PDG) has been newly synthesized via a facile green one-step chemical route as a functionalized graphene-based additive to copolymerize with aniline for fabricating innovative PDG/polyaniline conducting polymer composites (PDG/PANI) containing very special semi-interpenetrating networks (S-IPNs).. The S-IPNs which not only provide additional pathways by creating chemically-bonded PDG and PANI for smoothly transporting carriers, but greatly reduce the amount of graphene required to less than a few percent could effectively improve the overall electrical conductivity, Seebeck coefficient and thus the thermoelectric performance.. The found optimized thermoelectric figure of merit (ZT) of 0.74 approaches a practical high level which is comparable or much higher than previously reported ones for thermoelectric polymers.

Article Title: Polishing liquid and polishing method
Article Snippet: The film to be polished was polished for 60 sec while adding the polishing liquid dropwise onto the platen at 10 mL/min and setting the number of revolutions of the platen to 80 min−1 (rpm). (Calculation Method of Tungsten Polishing Rate) The film thicknesses of the tungsten films before and after polishing were measured using a sheet resistance meter (manufactured by NAPSON CORPORATION, RT-80/RG-80), and the polishing rate was calculated from the film thickness difference.

Article Title: Reactions between Si melt and various ceramics
Article Snippet: The concentration evaluation of the residual oxygen in Si by Fourier-transform infrared spectroscopy (FTIR, Bruker VERTEX 70) has been performed based on ASTM F 1188 method [13] and the resistivity of Si was measured by four-point probe resistance meter (RT-80, Napson Corporation, Tokyo, Japan).

Article Title: Preparing Silver–Copper pastes in accordance with percolation theory for die attach bonding
Article Snippet: The Si die and Cu substrate were successfully bonded with self-developed Ag–Cu pastes through two processes: tube furnace annealing at 250 C for 30 min in an Ar atmosphere and hot pressing at 250 C and 5 MPa for 30 min in air.. The microstructures, mechanical properties, thermal conductivity, and resistivity of the bonded samples were analyzed and then compared with those of commercial Ag paste.. For the samples subjected to tube furnace annealing, the critical Ag volume of the Ag–Cu paste was 35%, shear strength was 5.17 MPa, and resistivity was 9.22 μΩ-cm according to percolation theory.



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